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| Eudyna GaN-HEMT 45W Preliminary FEATURES High Voltage Operation : VDS=50V High Power : 47.5dBm (typ.) @ P3dB High Efficiency: 60%(typ.) @ P3dB Linear Gain : 12dB(typ.) @ f=2200MHz Broad Frequency Range : 800 to 2200MHz Proven Reliability EGN045MK High Voltage - High Power GaN-HEMT DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt Tstg Tch Condition Tc=25oC RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item Symbol VDS IGF IGR Tch DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature r P im l e Condition RG=10 RG=10 Vp VGDO P3dB d GL Rth a in Rating Limit 50 <9.7 >-3.6 200 120 -5 75.0 -65 to +175 250 y r Unit V V W oC oC Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min. Pinch-Off Voltage Gate-Drain Breakdown Voltage 3dB Gain Compression Power Drain Efficiency Linear Gain Thermal Resistance VDS=50V IDS=18mA IGS=- 9.0 mA VDS=50V IDS(DC)=250mA f=2.2GHz Channel to Case 11.0 -1.0 46.5 Limit Typ. Max. -2.0 -350 47.5 60 12.0 2.0 -3.5 3.0 Unit V V dBm % dB oC/W Edition 1.0 June 2005 1 EGN045MK High Voltage - High Power GaN-HEMT Output Power vs. Frequency VDS=50V IDS(DC)=250mA Output Power and Drain Efficiency vs. Input Power VDS=50V IDS(DC)=250mA f=2.2GHz 50 48 Output Power [dBm] 46 Output Power [dBm] 44 42 40 38 36 34 32 30 2.05 2.10 2.15 2.20 2.25 50 48 46 44 42 40 38 36 34 32 30 Output Power 100 90 80 Drain Efficiency [%] 70 60 50 40 Drain Effi. 30 20 10 0 Input Power [dBm] Frequency [GHz] Pin=22dBm Pin=34dBm re P Pin=26dBm Pin=38dBm im l 2.30 Pin=30dBm 2.35 a in y r 18 20 22 24 26 28 30 32 34 36 38 40 Power Derating Curve 80 70 60 50 40 30 20 10 Total Power Dissipation [W] 0 0 50 100 150 200 250 300 Case Temperature [ ] 2 EGN045MK High Voltage - High Power GaN-HEMT S-Parameters @VDS=50V IDS=250mA f=0.5 to 5.5 GHz Zl = Zs = 50 ohm Marker : 2.2GHz Freq [GHz] 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 0 4.0 4.1 4.2 4.3 4.4 4.5 4.6 S12 4.7 S21 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 S11 ANG MAG 0.910 -176.7 0.912 -178.6 0.914 179.9 0.919 178.0 0.924 176.7 0.924 175.3 0.927 174.0 0.933 173.2 0.934 172.1 0.929 171.2 0.936 170.3 0.937 169.3 0.937 168.5 0.940 168.3 0.937 167.4 0.935 167.1 0.933 166.4 0.933 166.0 0.932 165.5 0.929 165.1 0.927 164.5 0.926 163.8 0.921 163.0 0.922 162.5 0.918 161.5 0.913 160.8 0.912 159.6 0.910 158.5 0.909 157.3 0.904 156.1 0.900 154.7 0.896 153.3 0.893 151.5 0.891 150.2 0.888 148.4 0.885 146.8 0.879 145.1 0.872 143.1 0.873 140.9 0.872 138.8 0.868 136.7 0.864 134.1 0.855 131.6 0.847 128.5 0.839 125.2 0.831 121.6 0.820 117.9 0.802 114.0 0.785 109.9 0.770 105.5 0.755 101.4 S21 MAG ANG 5.860 56.6 4.663 50.0 3.801 44.0 3.170 38.2 2.672 33.2 2.291 28.6 1.978 24.3 1.727 20.1 1.527 16.7 1.354 12.8 1.214 10.1 1.092 7.1 0.992 4.6 0.912 2.6 0.832 -0.1 0.778 -2.1 0.723 -3.8 0.678 -5.9 0.641 -8.1 0.608 -10.1 0.582 -11.6 0.556 -13.7 0.533 -15.7 0.520 -17.7 0.504 -19.9 0.489 -21.9 0.480 -24.1 0.472 -26.6 0.466 -28.6 0.458 -31.5 0.452 -33.6 0.449 -36.1 0.446 -39.3 0.445 -42.1 0.449 -45.1 0.449 -47.5 0.453 -50.4 0.457 -53.9 0.461 -57.8 0.468 -61.6 0.477 -65.7 0.482 -69.5 0.485 -73.6 0.491 -78.4 0.497 -82.1 0.505 -86.0 0.521 -89.0 0.541 -92.8 0.580 -96.7 0.626 -102.1 0.683 -108.5 S12 MAG ANG 0.009 -11.1 0.008 -14.0 0.007 -13.6 0.006 -9.8 0.006 -4.9 0.005 2.5 0.005 7.4 0.005 22.0 0.005 28.8 0.005 36.7 0.006 44.4 0.006 51.0 0.006 52.2 0.007 58.3 0.008 60.1 0.009 61.9 0.009 63.5 0.010 67.0 0.011 65.5 0.012 68.3 0.013 68.4 0.015 69.0 0.016 68.1 0.017 69.3 0.019 67.0 0.021 66.7 0.023 64.6 0.025 62.6 0.027 61.4 0.029 60.5 0.031 58.1 0.035 56.6 0.038 53.0 0.041 51.0 0.044 48.4 0.048 44.9 0.052 42.3 0.057 38.5 0.062 34.2 0.068 31.3 0.074 26.8 0.081 22.4 0.087 16.8 0.097 11.3 0.105 5.1 0.115 -0.9 0.123 -7.5 0.133 -13.7 0.142 -20.7 0.155 -27.0 0.169 -33.5 S22 MAG 0.503 0.557 0.602 0.641 0.675 0.702 0.727 0.745 0.759 0.772 0.782 0.792 0.797 0.808 0.816 0.825 0.835 0.844 0.853 0.859 0.865 0.870 0.874 0.879 0.882 0.882 0.882 0.886 0.882 0.881 0.880 0.875 0.871 0.860 0.859 0.847 0.840 0.830 0.810 0.798 0.773 0.747 0.720 0.685 0.642 0.593 0.541 0.491 0.444 0.403 0.365 ANG -140.4 -143.9 -147.2 -150.8 -154.1 -157.1 -159.5 -162.1 -164.4 -166.3 -168.1 -169.5 -170.9 -172.1 -173.5 -174.6 -175.5 -176.8 -177.8 -179.0 -179.9 178.8 177.7 176.2 174.7 173.6 172.1 170.3 168.7 166.9 164.9 162.9 160.4 158.4 155.5 152.7 150.2 147.0 143.5 140.1 135.8 132.2 127.3 122.6 117.5 112.8 108.4 104.5 100.4 96.5 91.4 +50j +25j 10 25 +100j +10j 2.2GHz 50 +250j 0 2.2GHz -10j -250j -25j -50j -100j S11 S22 r P +90 2.2GHz im l e a in y r 180 20 Scale for |S21| 2.2GHz 0.2 Scale for |S 12| -90 3 |
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